Elektroniskās daļas : HY27UF081G2M

Ražotājs : Hynix Semiconductor

Iepakošanas :

Kniepadatas :

Apraksts : 1Gbit (128Mx8bit 64Mx16bit) NAND Flash Memory

Temperatūra : Min °C | Max °C

Datasheet : HY27UF081G2M PDF

• HY27UF081G
• HY27UF081G2A
• HY27UF081G2M
• HY27UF081G2M-F
• HY27UF081G2M-T
• HY27UF081G2M-TCB
• HY27UF081G2M-TCP
• HY27UF081G2M-TCS
• HY27UF081G2M-TEB
• HY27UF081G2M-TEP
• HY27UF081G2M-TES
• HY27UF081G2M-TIB
• HY27UF081G2M-TIP
• HY27UF081G2M-TIS
• HY27UF081G2M-TMB